EEWORLDEEWORLDEEWORLD

Part Number

Search

IXGH10N60AU1

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size78KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet Parametric Compare View All

IXGH10N60AU1 Online Shopping

Suppliers Part Number Price MOQ In stock  
IXGH10N60AU1 - - View Buy Now

IXGH10N60AU1 Overview

IGBT

IXGH10N60AU1 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeINSULATED GATE BIPOLAR
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
Combi Packs
V
CES
IXGH10N60U1
600 V
IXGH10N60AU1
600 V
I
C25
20 A
20 A
V
CE(sat)
2.5 V
3.0 V
TO-247 AD
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (M3)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 150
Clamped inductive load, L = 300
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
20
10
40
I
CM
= 20
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
Features
l
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
l
1.13/10 Nm/lb.in.
6
300
g
°C
l
l
l
l
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.5
260
2.5
±100
10N60U1
10N60AU1
2.5
3.0
V
V
µA
mA
nA
V
V
l
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
µA,
V
GE
= 0 V
= 500
µA,
V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
© 1996 IXYS All rights reserved
91751G(3/96)

IXGH10N60AU1 Related Products

IXGH10N60AU1 IXGH10N60U1
Description IGBT IGBT
state ACTIVE ACTIVE
Transistor type INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR
Serial port communication problem between 51 single chip microcomputer and PC
Hello, I am studying the serial communication problem between 51 MCU and PC. The code is already written, but the display on the hyperterminal is indeed garbled... Please help me find the error! Thank...
mmy722 Embedded System
I've been under a lot of work pressure lately.
I have been under a lot of work pressure lately. I can't sleep and eat well every day. There are too many things to deal with, including the pressure in life and work. I still have to work hard....
青天仪表 Talking about work
Safety symbols of countries around the world
[size=4] The purpose of safety regulations is to prevent product users from being harmed by product quality problems when using the product. Therefore, countries around the world have formulated their...
qwqwqw2088 Analogue and Mixed Signal
Problem: No square wave signal on 2812_SPI_SPIMIMO pin
[color=red]October 15th: [/color]As the title says, I use 2812 SPI. Normal mode, 8-bit character. The other three pins have normal square wave output, but the SPIMIMO pin has no square wave output... ...
foreverlove3721 Microcontroller MCU
Application of CPLD Technology in PCI Bus Switch
PLD ( Programmable Logic Device ) has developed rapidly and attracted more and more attention due to its flexible operation, easy use, rapid development and low investment risk. PLD is a logic device ...
rain Embedded System
IoT Development Board Comparison Series 6 - SensorTag and Hexiwear
Strictly speaking, these two are not the same type of products, but because of similar functional positioning and appearance, they can be compared. 1. Functional comparison SensorTag: Based on the upg...
fyaocn RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1199  1751  203  621  1090  25  36  5  13  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号