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BB804R215

Description
DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
CategoryDiscrete semiconductor    diode   
File Size69KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BB804R215 Overview

DIODE VHF BAND, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

BB804R215 Parametric

Parameter NameAttribute value
MakerNXP
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage18 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Minimum diode capacitance ratio1.65
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum reverse current0.02 µA
Reverse test voltage16 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
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