AP9936M
Advanced Power
Electronics Corp.
▼
DC-DC Application
▼
Dual N-channel Device
▼
Surface Mount Package
G2
S2
D1
D1
D2
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
50mΩ
5A
SO-8
S1
G1
Description
D1
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
5
4
40
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
20102202
AP9936M
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.037
Max. Units
-
-
50
80
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.9A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
DS
=24V ,V
GS
=0V
V
GS
= ± 20V
I
D
=5A
V
DS
=15V
V
GS
=5V
V
DS
=15V
I
D
=1.5A
R
G
=3.3Ω,V
GS
=10V
R
D
=10Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
-
6
-
-
-
6.1
1.4
3.3
6.7
6.4
22.1
2.1
240
145
55
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25℃, I
S
=1.7A, V
GS
=0V
Min.
-
-
Typ.
-
-
Max. Units
1.67
1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP9936M
60
45
T
C
=25 C
o
10V
8.0V
T
C
=150
o
C
10V
8.0V
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
5.0V
30
6.0V
20
15
4.0V
V
GS
=3.0V
4.0V
V
GS
=3.0V
0
0
2
4
6
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.8
I
D
=5A
T
C
=25
℃
100
I
D
=5A
V
GS
=10V
1.6
R
DS(ON)
(m
Ω
)
80
Normalized R
DS(ON)
2
4
6
8
10
12
1.4
1.2
60
1
40
0.8
20
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9936M
8
2.5
2
6
I
D
, Drain Current (A)
1.5
4
P
D
(W)
1
0.5
0
2
0
25
50
75
100
125
150
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
100us
Normalized Thermal Response (R
thja
)
10
0.2
0.1
0.1
1ms
I
D
(A)
0.05
1
10ms
100ms
1s
0.02
0.01
P
DM
0.01
Single Pulse
t
T
0.1
10s
T
C
=25
o
C
Single Pulse
0.01
0.1
1
10
100
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
DC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9936M
12
f=1.0MHz
1000
10
I
D
=5A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
Ciss
C (pF)
Coss
100
6
4
Crss
2
0
0
2
4
6
8
10
12
10
1
8
15
22
29
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
10
2.5
2
Tj=150
o
C
Tj=25
o
C
V
GS(th)
(V)
I
S
(A)
1
1.5
1
0.1
0
0.4
0.8
1.2
1.6
0.5
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature ( C )
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
京公网安备 11010802033920号
EEWORLD
