IC61LV12816
Document Title
128K x 16 Hight Speed SRAM with 3.3V
Revision History
Revision No
0A
0B
1
Draft Date
Remark
September 12,2001
April 23,2004
History
Initial Draft
Revise typo on page 6
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The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
1
IC61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
•
•
•
•
•
High-speed access time: 8, 10, 12, and 15 ns
CMOS low power operation
TTL and CMOS compatible interface levels
Single 3.3V
±
10%power supply
Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
DESCRIPTION
The
ICSI
IC61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using
ICSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC61LV12816 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
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Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
IC61LV12816
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CE
OE
WE
LB
UB
NC
Vcc
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Vcc
3.3V
±
10%
3.3V
±
10%
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
P
T
I
OUT
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Com.
Ind.
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to 4.0
–0.5 to Vcc+0.5
–65 to +150
–65 to +85
–45 to +90
2.0
+20
Unit
V
V
°C
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
,
Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
–1
–5
–1
–5
Max.
—
0.4
V
CC
+ 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
µA
µA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
4
Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
IC61LV12816
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Vcc Current
I
SB
1
, I
SB
2
I
CC
I
CC
1
2
3
4
Write
I
CC
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
SB
1
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8 ns
Min. Max.
—
—
—
—
—
—
220
230
30
40
10
15
-10 ns
Min. Max.
—
—
—
—
—
—
200
210
30
40
10
15
-12 ns
Min. Max.
—
—
—
—
—
—
180
190
30
40
10
15
-15 ns
Min. Max.
—
—
—
—
—
—
165
175
30
40
10
15
Unit
mA
mA
5
6
7
8
9
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
5
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