Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PDTC123EMB
83B
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 1 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3
(SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123EMB.
SO
T8
1.2 Features and benefits
100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic
package
Low package height of 0.37 mm
1.3 Applications
Low-current peripheral driver
Control of IC inputs
Replaces general-purpose transistors
in digital applications
Mobile applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter
voltage
output current
bias resistor 1 (input)
bias resistor ratio
T
amb
= 25 °C
Conditions
open base
Min
-
-
1.54
0.8
Typ
-
-
2.2
1
Max
50
100
2.86
1.2
Unit
V
mA
kΩ
NXP Semiconductors
PDTC123EMB
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 2.
Pin
1
2
3
I
G
O
Pinning information
Symbol Description
input (base)
GND (emitter)
output (collector)
1
3
2
Transparent
top view
1
R2
R1
Simplified outline
Graphic symbol
3
2
SOT883B (DFN1006B-3)
sym007
3. Ordering information
Table 3.
Ordering information
Package
Name
PDTC123EMB
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
Type number
4. Marking
Table 4.
Marking codes
Marking code
0011 0011
Type number
PDTC123EMB
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PDTC123EMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2012
2 of 12
NXP Semiconductors
PDTC123EMB
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
5. Limiting values
Table 5.
Symbol
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
pulsed; t
p
≤
1 ms
T
amb
≤
25 °C
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
open emitter
open base
open collector
positive
negative
Min
-
-
-
-
-
-
-
-
-
-65
-65
Max
50
50
10
12
-10
100
100
250
150
150
150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
300
P
tot
(mW)
200
006aad009
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 2.
Power derating curve for DFN1006B-3 (SOT883B)
PDTC123EMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2012
3 of 12
NXP Semiconductors
PDTC123EMB
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
500
Unit
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aab603
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PDTC123EMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2012
4 of 12
京公网安备 11010802033920号
EEWORLD
