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3SK139P

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACK-4
CategoryDiscrete semiconductor    The transistor   
File Size433KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

3SK139P Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACK-4

3SK139P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Minimum power gain (Gp)13 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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3SK139P Related Products

3SK139P 3SK139Q
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINI PACK-4
Is it Rohs certified? incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 15 V 15 V
Maximum drain current (Abs) (ID) 0.03 A 0.03 A
Maximum drain current (ID) 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.15 W 0.15 W
Minimum power gain (Gp) 13 dB 13 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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