1N4148W-G-N0RB datasheet, PDF - EEWORLD Datasheet

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1N4148W-G-N0RB: Description0.15A, 100V, SILICON, SIGNAL DIODE,; CategoryDiscrete semiconductor diode; File Size96KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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1N4148W-G-N0RB Overview

0.15A, 100V, SILICON, SIGNAL DIODE,

1N4148W-G-N0RB Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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1N4148W-G

Taiwan Semiconductor

Small Signal Product

High Speed SMD Switching Diode

FEATURES

- Fast switching device (t

<4.0ns)

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

SOD-123

MECHANICAL DATA

- Case: Bend lead SOD-123 small outline plastic package

- Terminal: Matte tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Polarity: Indicated by cathode band

- Weight: 10 ± 0.5 mg

- Marking Code: T4

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

PARAMETER

Power dissipation

DC blocking voltage

Repetitive peak reverse voltage

Work peak reverse voltage

RMS reverse voltage

Repetitive peak forward current

Mean forward current

Non-repetitive peak forward surge current @ t=1ms

@ t=10ms

Thermal resistance (Junction to Ambient) (Note 1)

Junction and storage temperature range

PARAMETER

=1.0mA

Forward voltage

=10mA

=50mA

=150mA

=20V

Reverse leakage current

=75V

=25V, Tj=150℃

=75V, Tj=150℃

Junction capacitance

Reverse recovery time

=0, f=1.0MHz

(Note 2)

Trr

SYMBOL

RRM

RWM

R(RMS)

FRM

FSM

θJA

, T

STG

SYMBOL

MIN

VALUE

350

100

300

150

2.0

1.0

357

-65 to + 150

MAX

0.715

0.855

1.0

1.25

2.5

2.0

4.0

µA

UNIT

C/W

UNIT

Notes: 1. Valid provided that terminals are kept at ambient temperature

Notes: 2. Reverse Recovery Test Conditions : I

=10mA, I

=10mA, R

=100Ω, I

=1mA

Document Number: DS_S1403004

Version: B14

1N4148W-G-N0RB Related Products

	1N4148W-G-N0RB	1N4148W-G-N0RBG
Description	0.15A, 100V, SILICON, SIGNAL DIODE,	0.15A, 100V, SILICON, SIGNAL DIODE,
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2	R-PDSO-G2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C
Maximum output current	0.15 A	0.15 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.35 W	0.35 W
Maximum repetitive peak reverse voltage	100 V	100 V
Maximum reverse recovery time	0.004 µs	0.004 µs
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Base Number Matches	1	1

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