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1N4148W-G-N0RBG

Description
0.15A, 100V, SILICON, SIGNAL DIODE,
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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1N4148W-G-N0RBG Overview

0.15A, 100V, SILICON, SIGNAL DIODE,

1N4148W-G-N0RBG Parametric

Parameter NameAttribute value
package instructionR-PDSO-G2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
1N4148W-G
Taiwan Semiconductor
Small Signal Product
High Speed SMD Switching Diode
FEATURES
- Fast switching device (t
rr
<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10 ± 0.5 mg
- Marking Code: T4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation
DC blocking voltage
Repetitive peak reverse voltage
Work peak reverse voltage
RMS reverse voltage
Repetitive peak forward current
Mean forward current
Non-repetitive peak forward surge current @ t=1ms
@ t=10ms
Thermal resistance (Junction to Ambient) (Note 1)
Junction and storage temperature range
PARAMETER
I
F
=1.0mA
Forward voltage
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=20V
Reverse leakage current
V
R
=75V
V
R
=25V, Tj=150℃
V
R
=75V, Tj=150℃
Junction capacitance
Reverse recovery time
V
R
=0, f=1.0MHz
(Note 2)
C
J
Trr
I
R
V
F
SYMBOL
P
D
V
R
V
RRM
V
RWM
V
R(RMS)
I
FRM
I
O
I
FSM
R
θJA
T
J
, T
STG
SYMBOL
MIN
-
-
-
-
-
-
-
-
-
-
VALUE
350
100
100
100
70
300
150
2.0
1.0
357
-65 to + 150
MAX
0.715
0.855
1.0
1.25
25
2.5
30
50
2.0
4.0
nA
µA
µA
µA
pF
ns
V
o
UNIT
mW
V
V
V
V
mA
mA
A
C/W
o
C
UNIT
Notes: 1. Valid provided that terminals are kept at ambient temperature
Notes: 2. Reverse Recovery Test Conditions : I
F
=10mA, I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Document Number: DS_S1403004
Version: B14

1N4148W-G-N0RBG Related Products

1N4148W-G-N0RBG 1N4148W-G-N0RB
Description 0.15A, 100V, SILICON, SIGNAL DIODE, 0.15A, 100V, SILICON, SIGNAL DIODE,
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G2 R-PDSO-G2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.15 A 0.15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.35 W 0.35 W
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Base Number Matches 1 1

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