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BZM55B3V9TR

Description
Zener Diode, Silicon, HERMETIC SEALED, MICROMELF-2
CategoryDiscrete semiconductor    diode   
File Size150KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BZM55B3V9TR Overview

Zener Diode, Silicon, HERMETIC SEALED, MICROMELF-2

BZM55B3V9TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
V
Z
–tolerance
±
2%
96 12315
Applications
Voltage stabilization
Order Instruction
Type
BZM55B2V4
Ordering Code
BZM55B2V4–TR
BZM55B2V4–TR3
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35
m
m copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Document Number 85597
Rev. 6, 25-Jun-01
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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