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11EQS03LTA1B2

Description
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size115KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
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11EQS03LTA1B2 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon

11EQS03LTA1B2 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

11EQS03LTA1B2 Related Products

11EQS03LTA1B2 11EQS03LTA2B5
Description Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon
Maker Nihon Inter Electronics Corporation Nihon Inter Electronics Corporation
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1

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