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MSW3201-320-R

Description
Pin Diode, Silicon, ROHS COMPLIANT, QFN-4
CategoryDiscrete semiconductor    diode   
File Size579KB,12 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric Compare View All

MSW3201-320-R Overview

Pin Diode, Silicon, ROHS COMPLIANT, QFN-4

MSW3201-320-R Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
Parts packaging codeQFN
package instructionS-XQCC-N4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresPD-CASE
applicationSWITCHING
ConfigurationCOMPLEX
Diode component materialsSILICON
Maximum diode forward resistance1 Ω
Diode typePIN DIODE
frequency bandVERY HIGH FREQUENCY TO C BAND
JESD-30 codeS-XQCC-N4
JESD-609 codee4
Minority carrier nominal lifetime4 µs
Number of components6
Number of terminals4
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formCHIP CARRIER
Maximum power dissipation12 W
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationQUAD
Base Number Matches1
Surface Mount PIN Diode
SP3T Switches
MSW3200-320 & MSW3201-320
Series Datasheet
Features
Surface Mount SP3T Switch in Compact Outline:
8mm L x 8mm W x 2.5 mm H
Higher Average Power Handling than Plastic (100 W C.W.)
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W)
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm)
Faster Switching Speed (1 μS)
Operates From +5 V & -180 V for Higher Linearity
RoHS Compliant
Description
The MSW3200-320 and MSW3201-320 Surface Mount Silicon PIN Diode SP3T Switches are
manufactured using Aeroflex / Metelics proven hybrid manufacturing process incorporating High Voltage
PIN Diodes and passive devices integrated within a ceramic substrate. This low profile, compact, surface
mount component, (8 mm L x 8 mm W x 2.5 mm H) offers superior low and high signal performance to
comparable MMIC devices in QFN packages. The SP3Tswitches are designed in a symmetrical topology
to optimize Insertion Loss and Isolation performance.
Using PIN Diodes with lower thermal resistance (< 10 ºC/W ), RF C.W. incident power levels of +50 dBm
and RF peak incident power levels of + 57 dBm are very achievable in higher power cold and hot
switching applications @ +85 ºC. The lower PIN Diode series resistance (< 1.0
Ω),
coupled with the longer
minority carrier lifetime, ( > 4 μS ), provides better IIP3 distortion values > + 65 dBm.
Applications
These MSW3200-320 & MSW3201-320 SP3T Switches are designed to be used in higher power switch
applications, operating from 20 MHz to 1,000 MHz, and 400-4,000 MHz respectively for high volume,
surface mount, solder re-flow manufacturing useful in IED and Radar market segments. These products
are durable, reliable, and capable of meeting all military, commercial, and industrial environments. The
devices are fully RoHS compliant.
Environmental Capabilities
The MSW3200-320 and MSW3201-320 SP3T Switches are capable of meeting the environmental
requirements of MIL-STD-202 and MIL-STD-750.
ESDand Moisture Sensitivity Level Rating
PIN Diode Switches are susceptible to ESD conditions as with all semiconductors. The ESD rating for this
device is Class 1C, HBM. The moisture sensitivity level rating for this device is MSL 2.
Document DS 13167 Rev B, ECN 9794
Revision Date: 4/20/2011

MSW3201-320-R Related Products

MSW3201-320-R MSW3201-320-T MSW3200-320-W MSW3201-320-W
Description Pin Diode, Silicon, ROHS COMPLIANT, QFN-4 Pin Diode, Silicon, ROHS COMPLIANT, QFN-4 Pin Diode, Silicon, ROHS COMPLIANT, QFN-4 Pin Diode, Silicon, ROHS COMPLIANT, QFN-4
Maker Cobham Semiconductor Solutions Cobham Semiconductor Solutions Cobham Semiconductor Solutions Cobham Semiconductor Solutions
Parts packaging code QFN QFN QFN QFN
package instruction S-XQCC-N4 S-XQCC-N4 S-XQCC-N4 S-XQCC-N4
Contacts 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown
Other features PD-CASE PD-CASE PD-CASE PD-CASE
application SWITCHING SWITCHING SWITCHING SWITCHING
Configuration COMPLEX COMPLEX COMPLEX COMPLEX
Diode component materials SILICON SILICON SILICON SILICON
Maximum diode forward resistance 1 Ω 1 Ω 1 Ω 1 Ω
Diode type PIN DIODE PIN DIODE PIN DIODE PIN DIODE
frequency band VERY HIGH FREQUENCY TO C BAND VERY HIGH FREQUENCY TO C BAND HIGH FREQUENCY TO L BAND VERY HIGH FREQUENCY TO C BAND
JESD-30 code S-XQCC-N4 S-XQCC-N4 S-XQCC-N4 S-XQCC-N4
JESD-609 code e4 e4 e4 e4
Minority carrier nominal lifetime 4 µs 4 µs 4 µs 4 µs
Number of components 6 6 6 6
Number of terminals 4 4 4 4
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE SQUARE SQUARE
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Maximum power dissipation 12 W 12 W 12 W 12 W
surface mount YES YES YES YES
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal surface GOLD GOLD GOLD GOLD
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location QUAD QUAD QUAD QUAD
ECCN code EAR99 - EAR99 EAR99
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