PD-93966A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30SLJQ030
JANS1N7078U3
JANTX1N7078U3
JANTXV1N7078U3
30Amp, 30V
Ref: MIL-PRF-19500/765
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 30Apk, T
J
= 125°C
1N7078U3 Units
30
30
150
0.57
A
V
A
V
°C
Description/Features
The 1N7078U3 center tap Schottky rectifier has been
expressly designed to meet the rigorous
requirements of HiRel environments. It is packaged in
the hermetic surface mount SMD-0.5 ceramic
package. The device's forward voltage drop and
reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical
high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500
quality conformance testing is available on source
control drawings to TX, TXV and S quality levels.
•
•
•
•
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long
Reliabiltiy
• Surface Mount
• Lightweight
• ESD Rating:Class NS per MIL-STD-750, Method 1020
T
J
, T
STG
Operating and Storage -65 to 150
CASE STYLE
CATHODE ANODE ANODE
Case Outine and Dimensions - SMD-0.5
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1
03/12/13
30SLJQ030, 1N7078U3
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
1N7078U3
30
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current
150
A
@ t
p
= 8.3 ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ T
C
= 105°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
See Fig. 1
Limits
0.58
0.61
0.67
0.51
0.55
0.62
0.41
0.47
0.57
Units
V
V
V
V
V
V
V
V
V
mA
mA
pF
nH
@ 15A
@ 20A
@ 30A
@ 10A
@ 20A
@ 30A
@ 15A
@ 20A
@ 30A
T
J
= 25°C
T
J
= 125°C
Conditions
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
V
R
= Rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
1.0
150
2000
4.8
V
R
= 5V
DC
( 1.0 MHz, 25°C )
Measured from center of cathode pad to center
of anode pad
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
R
thJC
wt
Max.Junction Temperature Range
Max. Storage Temperature Range
Max. Thermal Resistance, Junction
to Case
Weight (Typical)
Die Size (Typical)
Case Style
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
1.0
115X170
SMD-0.5
g
mils
Limits Units
-65 to 150
-65 to 150
1.6
°C
°C
°C/W
Conditions
DC operation See Fig. 4
2
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30SLJQ030, 1N7078U3
1000
Reverse Current - I R ( mA )
100
125°C
100°C
100
10
75°C
1
0.1
25°C
Instantaneous Forward Current - I F (A)
0.01
0
10
20
30
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
Tj = 25°C
10000
Junction Capacitance - CT (pF)
Tj = -55°C
T J = 25°C
1000
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V F (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
100
0
10
20
30
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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30SLJQ030, 1N7078U3
10
Thermal Response ( Z thJC )
1
D = 0.5
D = 0.4
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
160
Allowable Case Temperature - (°C)
140
120
100
80
60
40
20
0
0
5
10
15
20
DC
Rt
hJC = 1.6°C/W
80 % Square Wave (D=0.50)
Rated V R applied
25
30
35
40
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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.
Data and specifications subject to change without notice. 03/2013
4
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