ZXT690BK
45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK
SUMMARY
BV
CEO
= 45V : R
SAT
= 77m ; I
C
= 3A
DESCRIPTION
Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
FEATURES
•
3 Amps continuous current
•
Up to 6 Amps peak current
•
Low saturation voltages
•
High gain
DPAK
APPLICATIONS
•
DC - DC Converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Siren drivers
ORDERING INFORMATION
DEVICE
ZXT690BKTC
REEL
SIZE
13"
TAPE WIDTH
16mm embossed
QUANTITY PER REEL
2500 units
PINOUT
DEVICE MARKING
•
ZXT690B
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXT690BK
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
A
=25°C
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Thermal Resistance Junction to Ambient
Power Dissipation at T
A
=25°C
(c)
Linear Derating Factor
Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
T
j
, T
stg
P
D
P
D
(a)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
I
B
P
D
LIMIT
60
45
5
3
6
0.5
2.1
16.8
59
3.0
24.4
41
3.9
30.9
32
-55 to +150
UNIT
V
V
V
A
A
A
W
mW/°C
°C/W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still
air conditions.
(c) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still
air conditions.
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXT690BK
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
3
SEMICONDUCTORS
ZXT690BK
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(SAT)
MIN.
60
45
5
TYP.
145
65
8.2
<1
<1
<1
50
240
210
230
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V
BE(SAT)
V
BE(ON)
h
FE
500
400
150
60
Transition Frequency
Output Capacitance
Switching Times
f
T
C
OBO
t
ON
t
OFF
NOTES
(1)
Measured under pulsed conditions. Pulse width
150
16
33
1300
300 s; duty cycle
2%.
1.0
0.9
20
20
20
85
360
320
350
1.2
1.1
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
I
C
= 100 A
I
C
= 10mA
(1)
I
E
= 100 A
V
CB
= 35V
V
CB
= 35V
V
EB
= 4V
I
C
= 0.1A, I
B
= 0.5mA
(1)
I
C
= 1A, I
B
= 5mA
(1)
I
C
= 2A, I
B
= 40mA
(1)
I
C
= 3A, I
B
= 150mA
I
C
= 3A, I
B
= 150mA
(1)
I
C
= 3A, V
CE
= 2V
(1)
I
C
= 100mA, V
CE
= 2V
(1)
I
C
= 1A, V
CE
= 2V
(1)
I
C
= 2A, V
CE
= 2V
(1)
I
C
= 3A, V
CE
= 2V
(1)
MHz I
C
= 50mA, V
CE
= 5V
f = 50MHz
pF
ns
ns
V
CB
= 10V, f = 1MHz
(1)
I
C
= 500mA, V
CC
= 10V,
I
B1
= I
B2
= 50mA
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
ZXT690BK
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
5
SEMICONDUCTORS
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