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IDT70T633S8BC

Description
512K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
Categorystorage   
File Size342KB,27 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric View All

IDT70T633S8BC Overview

512K X 18 DUAL-PORT SRAM, 10 ns, PBGA256

IDT70T633S8BC Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals256
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage2.6 V
Minimum supply/operating voltage2.4 V
Rated supply voltage2.5 V
maximum access time10 ns
Processing package description17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
stateACTIVE
CraftsmanshipCMOS
packaging shapeSQUARE
Package SizeGRID ARRAY, LOW PROFILE
surface mountYes
Terminal formBALL
Terminal spacing1 mm
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width18
organize512K X 18
storage density9.44E6 deg
operating modeASYNCHRONOUS
Number of digits524288 words
Number of digits512K
Memory IC typeDUAL-PORT SRAM
serial parallelPARALLEL
Features
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
PRELIMINARY
IDT70T633/1S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
Full hardware support of semaphore signaling between
ports on-chip
On-chip port arbitration logic
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 144-pin Thin Quad
Flatpack and 208-ball fine pitch Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
UB
R
LB
R
Functional Block Diagram
UB
L
LB
L
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
NOTES:
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
L
ZZ
CONTROL
LOGIC
ZZ
R
(4)
5670 drw 01
NOVEMBER 2003
DSC-5670/3
1
©2003 Integrated Device Technology, Inc.

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