IDT71256S150P datasheet, PDF - EEWORLD Datasheet

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IDT71256S150P: Description32KX8 STANDARD SRAM, 25ns, CDIP28; Categorystorage; File Size478KB，10 Pages; ManufacturerIDT (Integrated Device Technology, Inc.); Websitehttp://www.idt.com/

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IDT71256S150P Overview

32KX8 STANDARD SRAM, 25ns, CDIP28

IDT71256S150P Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	28
Maximum operating temperature	125 Cel
Minimum operating temperature	-55 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
maximum access time	25 ns
Processing package description	0.600 INCH, CERAMIC, DIP-28
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	IN-LINE
Terminal form	THROUGH-HOLE
Terminal spacing	2.54 mm
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	CERAMIC, GLASS-SEALED
Temperature level	MILITARY
memory width	8
organize	32K X 8
storage density	262144 deg
operating mode	ASYNCHRONOUS
Number of digits	32768 words
Number of digits	32K
Memory IC type	STANDARD SRAM
serial parallel	PARALLEL

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CMOS Static RAM

256K (32K x 8-Bit)

Features

High-speed address/chip select time

– Military: 25/35/45/55/70/85/100ns (max.)

– Industrial: 25/35ns (max.)

– Commercial: 20/25/35ns (max.) low power only

Low-power operation

Battery Backup operation – 2V data retention

Produced with advanced high-performance CMOS

technology

Input and output directly TTL-compatible

Available in standard 28-pin (300 or 600 mil) ceramic DIP,

28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ and

32-pin LCC

Military product compliant to MIL-STD-883, Class B

IDT71256S

IDT71256L

◆

Description

The IDT 71256 is a 262,144-bit high-speed static RAM organized as

32K x 8. It is fabricated using IDT's high-performance, high-reliability

CMOS technology.

Address access times as fast as 20ns are available with power

consumption of only 350mW (typ.). The circuit also offers a reduced power

standby mode. When

goes HIGH, the circuit will automatically go to and

remain in, a low-power standby mode as long as

remains HIGH. In

the full standby mode, the low-power device consumes less than 15µW,

typically. This capability provides significant system level power and

cooling savings. The low-power (L) version also offers a battery backup

data retention capability where the circuit typically consumes only 5µW

when operating off a 2V battery.

The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,

a 28-pin 300 mil SOJ, a 28-pin (600 mil) plastic DIP, and a 32-pin LCC

providing high board level packing densities.

The IDT71256 military RAM is manufactured in compliance with the

latest revision of MIL-STD-883, Class B, making it ideally suited to military

temperature applications demanding the highest level of performance and

reliability.

◆

Functional Block Diagram

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

2946 drw 01

FEBRUARY 2001

DSC-2946/9

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