BAV100 datasheet, PDF - EEWORLD Datasheet

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BAV100: DescriptionRectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon, MINIMELF-2; CategoryDiscrete semiconductor diode; File Size452KB，3 Pages; ManufacturerMicro Commercial Components (MCC)

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BAV100 Overview

Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon, MINIMELF-2

BAV100 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	240
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	60 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	30
Base Number Matches	1

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MCC

Features

•

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

BAV100

THRU

BAV103

•

Maximum Ratings

Continuous Reverse

Voltage

BAV100

BAV101

BAV102

BAV103

Repetitive Peak Reverse

Voltage

BAV100

BAV101

BAV102

BAV103

Forward DC Current

Rectified Current (Average)

Half Wave Rectification

with Resist. Load

Repetitive Peak Forward

Current

Surge Forward Current

Power Dissipation

For general purpose

Silicon Epitaxial Planar Diodes

These diodes are also available in other case styles including: the DO-35 case

with the type designations BAV19 to BAV21, the SOD-123 case with the type

designations BAV19W to BAV21W, the SOT-23 case with the type designations

BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to

BAV21WS.

Small Signal Diodes

MINIMELF(SOD-80C)

50V

100V

150V

200V

60V

120V

200V

250V

250mA

200mA

625mA

1.0A

400mW

=25

Cathode Mark

RRM

=25

(FAV)

FRM

FSM

TOT

=25

(1)

f>50Hz,

=25

f>50Hz, T

=25

(1)

T<1s, Tj =25

=25

DIM

INCHES

MIN

.134

.008

.055

MAX

.142

.016

.059

DIMENSION

MIN

3.40

0.20

1.40

MAX

3.60

0.40

1.50

NOTE

Thermal Resistance

375

C/W

Junction to Ambient Air

(1)

Operating and Stora ge

-55 to +150

, T

STG

temperature Range

Note: (1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics @ 25°C Unless Otherwise Specified

Maximum Forward Voltage

= 100mA

= 200mA

Maximum Leakage current

BAV100

BAV101

BAV102

BAV103

Typital Capacitance

Maximum Reverse recovery

time

Typical Dynamic Forward

Resistance

1.00V

1.25V

100nA

15uA

100nA

15uA

100nA

15uA

100nA

15uA

1.5pF

50ns

5.0 OHM

=25

SUGGESTED SOLDER

PAD LAYOUT

0.105

TOT

=50V

=50V, Tj=100

=100V

=100V, Tj=100

=150V

=150V, Tj=100

=200V

=200V, Tj=100

=0V, f =1.0MHz

=30mA, I

=30mA

=3.0mA,

=100 OHM

0.075”

0.030”

=10mA

Revision: 3

www.mccsemi.com

2002/12/31

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