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BCV28E6327

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size513KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCV28E6327 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

BCV28E6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)4000
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BCV28, BCV48
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV29, BCV49 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
2
Type
BCV28
BCV48
Maximum Ratings
Parameter
Collector-emitter voltage
BCV28
BCV48
Collector-base voltage
BCV28
BCV48
Emitter-base voltage
Collector current
Marking
ED
EE
1=B
1=B
Pin Configuration
2=C
2=C
Symbol
V
CEO
30
60
V
CBO
40
80
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
10
500
800
100
200
1
150
Package
SOT89
SOT89
Value
Unit
V
3=E
3=E
mA
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
130 °C
Junction temperature
Storage temperature
W
°C
-65 ... 150
1
2011-10-05

BCV28E6327 Related Products

BCV28E6327 BCV48E6327
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 60 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 4000 2000
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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