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IXFA10N80P

Description
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size348KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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IXFA10N80P Overview

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

IXFA10N80P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionSMALL OUTLINE, R-PSSO-G3
Reach Compliance Codenot_compliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)600 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance1.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AA
JESD-30 codeR-PSSO-G3
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Polar
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263 (IXFA)
G
S
D (Tab)
IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
TO-220 (IXFP)
V
DSS
I
D25
t
rr
R
DS(on)
= 800V
= 10A
1.1
250ns
TO-3P (IXFQ)
G
D
S
G
D
S
D (Tab)
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
T
C
= 25C
Maximum Ratings
800
800
30
40
10
30
5
600
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
g
Features
TO-247 (IXFH)
G
D
S
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
International Standard Packages
Avalanche Rated
Low Package Inductance
Easy to Drive and to Protect
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P)
1.13 / 10
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 2.5mA
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 0.5
I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
800
3.0
5.5
          100
25
V
V
nA
A
DS99432G(6/18)
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
500A
1.1
© 2018 IXYS CORPORATION, All Rights Reserved

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Description Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, TO-247, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
Maker Littelfuse Littelfuse Littelfuse Littelfuse
package instruction SMALL OUTLINE, R-PSSO-G3 SMALL OUTLINE, R-PSSO-G3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant compliant compliant compli
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 600 mJ 600 mJ 600 mJ 600 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V 800 V 800 V
Maximum drain current (Abs) (ID) 10 A 10 A 10 A 10 A
Maximum drain current (ID) 10 A 10 A 10 A 10 A
Maximum drain-source on-resistance 1.1 Ω 1.1 Ω 1.1 Ω 1.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G3 R-PSSO-G3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 300 W 300 W 300 W 300 W
Maximum pulsed drain current (IDM) 30 A 30 A 30 A 30 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
JEDEC-95 code TO-263AA TO-220AB - TO-247AA
JESD-609 code e3 - e3 e1
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu)
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