IXFP10N80P datasheet, PDF - EEWORLD Datasheet

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IXFP10N80P: DescriptionPower Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size348KB，7 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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IXFP10N80P Overview

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

IXFP10N80P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Littelfuse
package instruction	SMALL OUTLINE, R-PSSO-G3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	600 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Polar

HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-263 (IXFA)

D (Tab)

IXFA10N80P

IXFP10N80P

IXFQ10N80P

IXFH10N80P

TO-220 (IXFP)

DSS

D25

DS(on)

= 800V

= 10A



1.1





250ns

TO-3P (IXFQ)

D (Tab)

Symbol

DSS

DGR

GSS

GSM

D25

dV/dt

stg

SOLD

Weight

Test Conditions

= 25C to 150C

= 25C to 150C, R

= 1M

Continuous

Transient

= 25C

= 25C, Pulse Width Limited by T

= 25C



, V



DSS

, T



150C

= 25C

Maximum Ratings

800

30

40

600

300

-55 ... +150

150

-55 ... +150

V/ns

C

°C

N/lb

Nm/lb.in

Features



TO-247 (IXFH)

(Tab)

= Drain

Tab = Drain

G = Gate

S = Source

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

International Standard Packages

Avalanche Rated

Low Package Inductance

Easy to Drive and to Protect

Mounting Force (TO-263)

10..65 / 2.2..14.6

Mounting Torque (TO-220, TO-247 & TO-3P)

1.13 / 10

TO-263

TO-220

TO-3P

TO-247

2.5

3.0

5.5

6.0

Advantages



Easy to Mount

Space Savings

High Power Density

Applications

Symbol

Test Conditions

= 25C Unless Otherwise Specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0V, I

= 250A

= V

, I

= 2.5mA



30V, V

= 0V

= V

DSS

, V

= 0V

= 150C

= 10V, I

= 0.5

•

D25

, Note 1

Characteristic Values

Min.

Typ.

Max.

800

3.0

5.5

          100

A



DS99432G(6/18)



Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

500A

1.1

IXFP10N80P Related Products

	IXFP10N80P	IXFA10N80P	IXFQ10N80P	IXFH10N80P
Description	Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3	Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3	Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, TO-247, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Littelfuse	Littelfuse	Littelfuse	Littelfuse
package instruction	SMALL OUTLINE, R-PSSO-G3	SMALL OUTLINE, R-PSSO-G3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	not_compliant	compliant	compli
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	600 mJ	600 mJ	600 mJ	600 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V	800 V	800 V
Maximum drain current (Abs) (ID)	10 A	10 A	10 A	10 A
Maximum drain current (ID)	10 A	10 A	10 A	10 A
Maximum drain-source on-resistance	1.1 Ω	1.1 Ω	1.1 Ω	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G3	R-PSSO-G3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W	300 W	300 W
Maximum pulsed drain current (IDM)	30 A	30 A	30 A	30 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
JEDEC-95 code	TO-220AB	TO-263AA	-	TO-247AA
JESD-609 code	-	e3	e3	e1
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)

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