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FSL110R4

Description
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size84KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

FSL110R4 Overview

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

FSL110R4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)10.5 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FSL110D, FSL110R
Data Sheet
December 2001
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Fairchild has developed
a series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Fairchild for any desired deviations
from the data sheet.
Features
• 3.5A, 100V, r
DS(ON)
= 0.600
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
D
G
S
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSL110D1
FSL110D3
FSL110R1
FSL110R3
FSL110R4
Package
TO-205AF
Formerly available as type TA17616.
G
D
S
©2001 Fairchild Semiconductor Corporation
FSL110D, FSL110RH Rev. B

FSL110R4 Related Products

FSL110R4 FSL110R3 FSL110D1
Description Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 4 4 4
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 3.5 A 3.5 A 3.5 A
Maximum drain-source on-resistance 0.6 Ω 0.6 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-205AF TO-205AF TO-205AF
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 10.5 A 10.5 A 10.5 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon )
Base Number Matches 1 1 -
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