FST10045 thru FST100100
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V V
RRM
• Isolated to Plate
• Not ESD Sensitive
TO-249AB Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
FST10045
45
32
45
-55 to 150
-55 to 150
FST10060
60
42
60
-55 to 150
-55 to 150
FST10080
80
57
80
-55 to 150
-55 to 150
FST100100
100
70
100
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 50 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
FST10045
100
1000
0.70
1
10
30
1.0
FST10060
100
1000
0.75
1
10
30
1.0
FST10080
100
1000
0.84
1
10
30
1.0
FST100100
100
1000
0.84
1
10
30
1.0
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
FST10045 thru FST100100
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
N
A
P
C
E
G
J
L
M
1
2
3
B
K
F
H
R
Q
D
Inches
Min
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
Q
1.995
0.300
0.495
0.182
0.990
2.390
1.495
0.114
-----
0.256
0.490
0.330
0.175
0.035
0.445
0.890
Max
2.005
0.325
0.505
0.192
1.010
2.410
1.525
0.122
0.420
0.275
0.510
0.350
0.195
0.045
0.455
0.910
Min
50.67
7.62
12.57
4.62
25.15
60.71
37.90
2.90
-----
6.5
12.45
8.38
4.45
0.89
11.30
22.61
Millimeters
Max
50.93
8.26
12.83
4.88
26.65
61.21
38.70
3.10
10.67
7.0
12.95
8.90
4.95
1.14
11.56
23.11
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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