DTA114EUA-T106 datasheet, PDF - EEWORLD Datasheet

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DTA114EUA-T106: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，11 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTA114EUA-T106 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN

DTA114EUA-T106 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Shell connection	COLLECTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	68
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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DTA114E series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Datasheet

Outline

Parameter

C(MAX.)

Value

-50V

-100mA

10kΩ

VMT3

EMT3F

DTA114EM

(SC-105AA)

EMT3

DTA114EEB

(SC-89)

UMT3F

Features

1) Built-In Biasing Resistors, R

= R

= 10kΩ

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) Only the on/off conditions need to be set

for operation, making the circuit design easy.

4) Complementary NPN Types: DTC114E series

DTA114EE

SOT-416(SC-75A)

UMT3

DTA114EUB

(SC-85)

SMT3

DTA114EUA

SOT-323(SC-70)

DTA114EKA

SOT-346(SC-59)

Application

INVERTER, INTERFACE, DRIVER

Inner circuit

DTA114EM/ DTA114EEB/ DTA114EUB

DTA114EE/ DTA114EUA/ DTA114EKA

Packaging specifications

Part No.

DTA114EM

DTA114EEB

DTA114EE

DTA114EUB

DTA114EUA

DTA114EKA

Package

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

Package

size

1212

1616

2021

2928

Taping

code

T2L

T106

T146

1/10

Reel size Tape width

(mm)

180

Basic

ordering

unit.(pcs)

8000

3000

Marking

www.rohm.com

20150527 - Rev.004

DTA114EUA-T106 Related Products

	DTA114EUA-T106	DTA114EKA-T146	DTA114EUB-TL	DTA114EE-TL	DTA114EM-T2L	DTA114EEB-TL
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3F, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3F, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	68	68	30	68	68	30
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-F3	R-PDSO-G3	R-PDSO-F3	R-PDSO-F3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	PNP	PNP	NPN	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.15 W	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	FLAT	GULL WING	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Shell connection	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	-
Base Number Matches	1	1	1	1	1	-

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