Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | ROHM Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-F3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 68 |
| JESD-30 code | R-PDSO-F3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.15 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| Base Number Matches | 1 |
| DTA114EM-T2L | DTA114EKA-T146 | DTA114EUB-TL | DTA114EUA-T106 | DTA114EE-TL | DTA114EEB-TL | |
|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3F, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3F, 3 PIN |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to |
| Maker | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-F3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 68 | 68 | 30 | 68 | 68 | 30 |
| JESD-30 code | R-PDSO-F3 | R-PDSO-G3 | R-PDSO-F3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-F3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 | 260 |
| Polarity/channel type | PNP | PNP | NPN | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.15 W | 0.2 W | 0.2 W | 0.2 W | 0.15 W | 0.15 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | FLAT | GULL WING | FLAT | GULL WING | GULL WING | FLAT |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 10 | 10 | 10 | 10 | 10 | 10 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| Shell connection | COLLECTOR | COLLECTOR | - | COLLECTOR | COLLECTOR | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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