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KSA642GD75Z

Description
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size70KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSA642GD75Z Overview

Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA642GD75Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
KSA642
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
Collector-Base Voltage: V
CBO
= -30V
Low Collector-Emitter Saturation Voltage: V
CE
(sat)= -0.15V(TYP)
Complement to KSC184
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
-30
-25
-5
-50
250
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 2. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
OB
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA. I
B
=0
I
E
= -10µA. I
C
=0
V
CB
= -25V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -1mA
V
CB
= -6V, I
E
= 0
f=1MHz
Min
-30
-25
-5
-100
-100
400
-0.3
-1.0
Typ
Max
Unit
V
V
V
nA
nA
V
V
MHz
pF
40
-0.15
-0.65
100
2.5
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
70-140
Y
120-240
G
200-400
Rev. B
©
1999 Fairchild Semiconductor Corporation
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