20E8TA2B1 datasheet, PDF - EEWORLD Datasheet

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20E8TA2B1: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.3A, 800V V(RRM), Silicon, MINIATURE PACKAGE-2; CategoryDiscrete semiconductor diode; File Size60KB，2 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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Rectifier Diode, 1 Phase, 1 Element, 1.3A, 800V V(RRM), Silicon, MINIATURE PACKAGE-2

20E8TA2B1 Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.92 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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Description	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 800V V(RRM), Silicon, MINIATURE PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 400V V(RRM), Silicon, MINIATURE PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 200V V(RRM), Silicon, MINIATURE PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon, MINIATURE PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 100V V(RRM), Silicon, MINIATURE PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.3A, 1000V V(RRM), Silicon, MINIATURE PACKAGE-2
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Contacts	2	2	2	2	2	2
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.92 V	0.92 V	0.92 V	0.92 V	0.92 V	0.92 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	400 V	200 V	600 V	100 V	1000 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1	1	1

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