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20E4TA2B1

Description
Rectifier Diode, 1 Phase, 1 Element, 1.3A, 400V V(RRM), Silicon, MINIATURE PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size60KB,2 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

20E4TA2B1 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.3A, 400V V(RRM), Silicon, MINIATURE PACKAGE-2

20E4TA2B1 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

20E4TA2B1 Related Products

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Description Rectifier Diode, 1 Phase, 1 Element, 1.3A, 400V V(RRM), Silicon, MINIATURE PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.3A, 200V V(RRM), Silicon, MINIATURE PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon, MINIATURE PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.3A, 100V V(RRM), Silicon, MINIATURE PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.3A, 800V V(RRM), Silicon, MINIATURE PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.3A, 1000V V(RRM), Silicon, MINIATURE PACKAGE-2
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Contacts 2 2 2 2 2 2
Reach Compliance Code unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.92 V 0.92 V 0.92 V 0.92 V 0.92 V 0.92 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A 80 A 80 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 1.3 A 1.3 A 1.3 A 1.3 A 1.3 A 1.3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 200 V 600 V 100 V 800 V 1000 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 1 1
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