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BB1A4M

Description
700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size251KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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BB1A4M Overview

700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR

BB1A4M Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)135
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

BB1A4M Related Products

BB1A4M BB1F3P-A BB1L3N-A BB1A4M-A BB1A4A-A BB1L3N BB1A3M-A BB1J3P-A BB1L2Q-A
Description 700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR BB1F3P-A BB1L3N-A BB1A4M-A BB1A4A-A 700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR 700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR 700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR BB1L2Q-A
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 4.54 BUILT-IN BIAS RESISTOR RATIO IS 2.12 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 2.12 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 3.03 BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC) 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A 0.7 A
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 135 135 135 135 135 135 135 135 135
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1 1
Brand Name - Renesas Renesas Renesas Renesas - - - Renesas
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C

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