5962-8969002LA datasheet, PDF - EEWORLD Datasheet

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5962-8969002LA: DescriptionStandard SRAM, 2KX8, 20ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, CERDIP-24; Categorystorage storage; File Size238KB，8 Pages; ManufacturerPyramid Semiconductor Corporation; Websitehttp://www.pyramidsemiconductor.com/

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Standard SRAM, 2KX8, 20ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, CERDIP-24

5962-8969002LA Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Pyramid Semiconductor Corporation
Parts packaging code	DIP
package instruction	DIP, DIP24,.3
Contacts	24
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
length	31.75 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Qualified
Filter level	38535Q/M;38534H;883B
Maximum seat height	5.08 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.15 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Base Number Matches	1

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5962-8969002LA Related Products

	5962-8969002LA	5962-8969001LA
Description	Standard SRAM, 2KX8, 20ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, CERDIP-24	Standard SRAM, 2KX8, 25ns, CMOS, CDIP24, 0.300 INCH, HERMETIC SEALED, CERDIP-24
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation
Parts packaging code	DIP	DIP
package instruction	DIP, DIP24,.3	DIP, DIP24,.3
Contacts	24	24
Reach Compliance Code	compliant	compliant
ECCN code	3A001.A.2.C	3A001.A.2.C
Maximum access time	20 ns	25 ns
I/O type	COMMON	COMMON
JESD-30 code	R-GDIP-T24	R-GDIP-T24
JESD-609 code	e0	e0
length	31.75 mm	31.75 mm
memory density	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	8	8
Number of functions	1	1
Number of terminals	24	24
word count	2048 words	2048 words
character code	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
organize	2KX8	2KX8
Output characteristics	3-STATE	3-STATE
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP
Encapsulate equivalent code	DIP24,.3	DIP24,.3
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V
Certification status	Qualified	Qualified
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum seat height	5.08 mm	5.08 mm
Maximum standby current	0.02 A	0.02 A
Minimum standby current	4.5 V	4.5 V
Maximum slew rate	0.15 mA	0.135 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	MILITARY	MILITARY
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	7.62 mm
Base Number Matches	1	1

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