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2SD777

Description
SILICON NPN DOUBLE DIFFUSED TYPE(PCT PROCESS)
CategoryDiscrete semiconductor    The transistor   
File Size234KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SD777 Overview

SILICON NPN DOUBLE DIFFUSED TYPE(PCT PROCESS)

2SD777 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)500
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

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