PD- 9.1336A
PRELIMINARY
IRFR/U024N
HEXFET
®
Power MOSFET
D
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR024N)
Straight Lead (IRFU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
V
DSS
= 55V
G
S
R
DS(on)
= 0.075Ω
I
D
= 17A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D -P ak
T O -2 52 A A
I-P ak
T O -25 1 A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
45
0.30
± 20
71
10
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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1
IRFR/U024N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
4.5
7.5
370
140
65
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.075
Ω
V
GS
= 10V, I
D
= 10A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 10A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
20
I
D
= 10A
5.3
nC V
DS
= 44V
7.6
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 10A
ns
–––
R
G
= 24Ω
–––
R
D
= 2.6Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
68
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
––– 56
83
ns
T
J
= 25°C, I
F
= 10A
––– 120 180
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 1.0mH
R
G
= 25Ω, I
AS
= 10A. (See Figure 12)
I
SD
≤
10A, di/dt
≤
280A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRFZ24N data and test conditions.
2
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IRFR/U024N
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
4.5V
20µ s P U LS E W ID TH
T
C
= 25°C
0.1
1
10
100
1
A
1
0.1
1
20µ s P U LS E W ID TH
T
C
= 175°C
10
100
A
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 17A
I
D
, D ra in -to-S o urc e C urren t (A )
2.5
T
J
= 2 5 °C
T
J
= 1 7 5 °C
2.0
10
1.5
1.0
0.5
1
4
5
6
7
V
DS
= 2 5V
2 0 µ s P U L S E W ID T H
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10V
100 120 140 160 180
A
V
G S
, G a te -to -S o u rc e V o lta g e (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U024N
700
600
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
20
I
D
= 10 A
V
D S
= 44V
V
D S
= 28V
16
C , C apacitanc e (pF )
500
C
iss
400
C
oss
12
300
8
200
C
rs s
4
100
0
1
10
100
A
0
0
4
8
FO R TE S T C IR C U IT
S E E FIG U R E 13
12
16
20
A
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
S D
, R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (on)
T
J
= 175°C
T
J
= 25°C
10
I
D
, D rain C urrent (A )
100
10µ s
10
100µ s
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
G S
= 0V
1.8
A
1
1
T
C
= 25°C
T
J
= 175°C
S ingle P ulse
10
1m s
10m s
100
A
2.0
V
S D
, S ource-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U024N
20
V
DS
V
GS
R
D
16
D.U.T.
+
I
D
, D rain C urrent (A m ps)
R
G
-
V
DD
12
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
Fig 10a.
Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
A
175
T
C
, C ase T em perature (°C )
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
T h erm al R es p on s e (Z
th JC
)
D = 0.5 0
1
0 .2 0
0 .1 0
0 .0 5
0 .02
0 .01
S IN G L E P U L S E
(T HE R M A L R E S P O N S E )
N otes :
1 . D uty factor D = t
P
D M
0.1
t
1
t
2
1
/ t
2
0.01
0.00001
2 . P ea k T
J
= P
D M
x Z
th J C
+ T C
A
1
0.0001
0.001
0.01
0.1
t
1
, R e c ta n g u la r P u lse D u ra tio n (se c )
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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