IRFY440MECPBF datasheet, PDF - EEWORLD Datasheet

IRFY440MECPBF: Description5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB; CategoryDiscrete semiconductor The transistor; File Size1MB，33 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFY440MECPBF Overview

5.5A, 500V, 0.98ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	0.98 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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