FDS8447 Single N-Channel PowerTrench
®
MOSFET
November 2006
FDS8447
Single N-Channel PowerTrench
®
MOSFET
40V, 12.8A, 10.5mΩ
Features
Max r
DS(on)
=
10.5mΩ at V
GS
= 10V, I
D
= 12.8A
Max r
DS(on)
=
12.3mΩ at V
GS
= 4.5V, I
D
= 11.4A
Low gate charge
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS compliant
tm
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench
®
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
Applications
DC - DC conversion
D
D
D
D
SO-8
Pin 1
S
S
G
S
D
D
D
D
5
6
7
8
4
G
3
2
1
S
S
S
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
40
±20
12.8
50
150
2.5
1
-55 to 150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance-Single operation, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS8447
Device
FDS8447
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8447 Rev. B
1
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, referenced to 25°C
V
DS
= 32V, V
GS
= 0V
T
J
= 55°C
V
GS
= ±20V, V
DS
= 0V
40
34
1
10
±100
V
mV/°C
µA
µA
nA
On Characteristics
(Note 2)
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 250µA, referenced to 25°C
V
GS
= 10V, I
D
= 12.8A
V
GS
= 4.5V, I
D
= 11.4A
V
GS
= 10V, I
D
= 12.8A,T
J
= 125°C
V
DS
= 10V, I
D
= 12.8A
1
1.8
-5
9
10
13
75.3
10.5
12.3
15
S
mΩ
3
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
f = 1MHz
2000
250
150
1.3
2600
350
250
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at V
GS
= 10V
Total Gate Charge at V
GS
= 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
DS
= 20V, I
D
= 12.8A,
V
DD
= 20V, I
D
= 12.8A
V
GS
= 10V, R
GEN
= 4.5Ω
11
14
27
7
35
19
6
7
20
25
42
14
49
27
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
and Maximum Ratings
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 12.8A (note 2)
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 12.8A, d
iF
/d
t
= 100A/µs
0.84
19
9.5
1.2
29
19
V
ns
nC
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a)
50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b)
125°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2:
Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3:
Starting T
J
= 25
°
C, L = 3mH, I
AS
= 10A, V
DD
= 40V, V
GS
= 10V.
FDS8447 Rev.B
2
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
3.0
2.5
2.0
1.5
1.0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
D
, DRAIN CURRENT (A)
40
30
20
V
GS
=10V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
10
0
0.0
0.4
0.8
1.2
1.6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
0.5
0
10
20
30
I
D
, DRAIN CURRENT(A)
40
50
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
25
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
I
D
= 12.8A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50
I
D
= 12.8A
V
GS
= 10V
20
T
J
= 125
o
C
15
T
J
= 25
o
C
10
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE
(
o
C
)
150
5
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
50
40
30
20
10
T
J
= -55
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source
Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
I
D
, DRAIN CURRENT (A)
V
DS
= 5V
T
J
= 150
o
C
T
J
= 25
o
C
10
1
0.1
0.01
1E-3
0.0
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
0.2
0.4
0.6
0.8
1.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDS8447 Rev.B
FDS8447 Single N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
10
8
6
4
2
0
V
DD
= 10V
10
4
C
iss
CAPACITANCE (pF)
V
DD
= 20V
V
DD
= 30V
10
3
C
oss
10
2
C
rss
f = 1MHz
V
GS
= 0V
0
10
20
30
Q
g
, GATE CHARGE(nC)
40
10
0.1
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 7. Gate Charge Characteristics
16
I
AS
, AVALANCHE CURRENT(A)
Figure 8. Capacitance vs Drain to Source Voltage
15
I
D
, DRAIN CURRENT (A)
12
9
6
3
R
θ
JA
= 50 C/W
o
13
10
7
T
J
= 125
o
C
T
J
= 25
o
C
V
GS
= 10V
V
GS
= 4.5V
4
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE(ms)
100
0
25
50
75
100
125
o
150
T
A
, AMBIENT TEMPERATURE
(
C
)
Figure 9. Unclamped Inductive Switching
Capability
100
100us
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
2000
1000
V
GS
= 10V
10
1ms
P
(
PK
)
, PEAK TRANSIENT POWER (W)
I
D
, DRAIN CURRENT (A)
100
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25
O
C
10ms
100ms
1s
10s
DC
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
0.1
10
SINGLE PULSE
0.01
0.01
0.1
1
10
100
200
1
-4
10
10
-3
V
DS
, DRAIN to SOURCE VOLTAGE (V)
10
10
10
10
t, PULSE WIDTH (s)
-2
-1
0
1
10
2
10
3
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8447 Rev.B
4
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
(PK)
0.01
t
1
t
2
1E-3
SINGLE PULSE
R
θJA
(t) = r(t)*R
θJA
R
θJA
= 125
o
C/W
DUTY FACTOR: D = t
1
/t
2
T
J
-T
A
=P*R
θJA
0.0002
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDS8447 Rev.B
5
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