2-3 IGBT
Selection Guide
By V
CES
V
CES
(V)
330
330
400
600
600
600
600
600
600
I
C
(A)
20
30
20
20
25
30
30
50
50
P
C
(W)
35
35
35
35
60
60
60
150
150
Part Number
FGT312
FGT313
FGT412
FGT612
FGM622S
FGM603
FGM623S
MGD623N
MGD623S
Package
TO220F(FM20)
TO220F(FM20)
TO220F(FM20)
TO220F(FM20)
TO3PF(FM100)
TO3PF(FM100)
TO3PF(FM100)
TO3P(MT100)
TO3P(MT100)
Transistors
153
2-3 IGBT
Specifications List by Part Number
Absolute Maximum Ratings (Ta=25°C)
Part
Number
V
CES
(V)
FGM603
FGM622S
FGM623S
FGT312
FGT313
FGT412
FGT612
MGD623N
MGD623S
600
600
600
330
330
400
600
600
600
V
GE
(V)
±20
±30
±30
±30
±30
±30
±30
±30
±30
I
C
(A)
30
25
30
20
30
20
20
50
50
I
C(pulse)
(A)
90
75
100
120
200
120
120
100
100
P
C
(Ta=25°C)
(W)
60
60
60
35
35
35
35
150
150
I
GES
I
CES
V
GE(th)
Conditions
Conditions
Conditions
(nA)
(V)
V
GE
(µA)
V
CE
I
C
V
CE
max
min
max (mA) (V)
(V) max
(V)
±100
±500
±500
±100
±100
±100
±100
±100
±100
±20
±30
±30
±30
±30
±30
±30
±30
±30
100
100
100
100
100
100
100
100
100
600
600
600
330
330
400
600
600
600
4
4
3
3
3
3
3
3
3
7
7
6
6
6
6
6
6
6
1
1
1
1
1
1
1
1
1
10
10
10
10
10
10
10
10
10
V
CE(sat)
Conditions
(V)
I
C
V
GE
typ
max
(A)
(V)
1.6
1.7
1.5
1.3
1.3
1.4
1.6
1.7
1.8
2.0
1.9
1.7
1.7
1.7
1.8
2.0
2.3
2.4
30
25
30
20
30
20
20
50
50
15
15
15
15
15
15
15
15
15
Cies Coes Cres
(pF)
typ
4600
1300
2500
1200
2400
1200
1200
2500
2500
(pF)
typ
110
80
150
130
110
120
80
150
150
(pF)
typ
80
40
80
65
60
65
40
80
80
Conditions
V
GE
V
CE
(V)
(V)
20
20
20
20
30
20
20
20
20
0
0
0
0
0
0
0
0
0
154
Transistors
2-3 IGBT
Electrical Characteristics (Ta=25°C)
td
(off)
tr
td
(on)
tf
(ns)
typ
130
50
100
15
20
15
25
75
75
(ns)
typ
70
60
80
30
90
35
60
70
70
(ns)
typ
340
200
300
55
90
55
70
250
250
(ns)
typ
200
120
120
210
180
220
190
200
120
Conditions
V
CE
I
C
(A)
(V)
30
25
30
20
60
20
20
50
50
300 L Load
300 L Load
300 L Load
150 R Load
250 R Load
200 R Load
300 R Load
300 L Load
300 L Load
Qg
(nC)
typ
120
40
65
35
65
35
35
65
65
Qge
(nC)
typ
30
10
20
8
10
8
6
15
15
Qgc
(nC)
typ
30
10
20
10
20
10
9
20
20
Conditions
I
C
V
CE
V
GE
(A)
(V)
(V)
30
25
30
20
60
20
20
50
50
300
300
300
150
250
200
300
300
300
15
15
15
15
15
15
15
15
15
VF
trr
Conditions
I
F
di/dt
(A) (A/µs)
Package
Mass
Conditions
I
F
(V)
(µs)
(A)
typ
typ
max
(g)
TO3PF(FM100) 6.5
TO3PF(FM100) 6.5
TO3PF(FM100) 6.5
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
1.2
1.2
1.6
1.6
30
30
0.3
0.3
30
30
100 TO3P(MT100)
100 TO3P(MT100)
6.0 Built-in Di
6.0 Built-in Di
Transistors
155
Package Type (Dimensions)
• TO-220F (FM20)
10.0
±0.2
• TO-220 (MT-25)
2.8
±0.2
(1.7)
• TO-3P (MT-100)
15.6
±0.3
4.5
1.3
±0.2
±0.2
(1.3)
2.0
16.0
±0.3
8.4
±0.2
4.0
±0.3
9.9
(8.7)
±0.3
9.6
±0.2
5.0
±0.7
4.2
C
2.8
±0.2
0.5
±0.2
4.8
±0.2
2.0
±0.1
18.95MAX
15.9
±0.3
0.8
±0.2
a
b
φ
3.3
±0.2
(3)
a
b
2
+0.2
−0.1
3
+0.2
−0.1
1.05
+0.2
−0.1
5.45
±0.1
E
2.4
±0.2
13.0min
1.35
±0.15
1.35
±0.15
0.85
+0.2
−0.1
0.45
+0.2
−0.1
2.54
2.2
±0.2
20.0min
3.5
3.9
±0.2
13.1
±0.5
0.5
−0.1
±0.15
0.65
+0.2
−0.1
1.7
+0.2
−0.1
2.54
±0.2
2.54
2.4
±0.2
10
±0.2
5.45
±0.1
B
C
a: Part Number
b: Lot No.
(1) (2) (3)
a: Part Number
b: Lot No.
• TO-3PF (FM100)
5.5
±0.2
3.45
±0.2
• MT-200
36.4
±0.3
6.0
2.1
9
7
±0.2
• TO-220S
24.4
±0.2
(1.4)
15.6
±0.2
2-
φ
3.2
±0.1
φ
3.2
±0.1
4.44
±0.2
φ
3.6
±0.2
9.2
±0.3
19.9
±0.3
4.0
23.0
±0.3
9.5
±0.2
0.8
5.5
±0.2
10.2
±0.3
1.3
±0.2
21.4
±0.3
1.6
b
2
3
1.05
+0.2
−0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.6
+0.2
−0.1
3.0
+0.3
−0.1
1.27
±0.2
(1.5)
a
b
φ
3.3
±0.2
3.0
a
b
c
(1.5)
8.6
±0.3
10.0
–0.5
+
0.3
a
0.1
–0.1
+
0.2
2.59
±0.2
+
0.3
3.3
(16.2)
1.75
±0.15
2.15
±0.15
1.05
+0.2
−0.1
5.45
±0.1
4.4
1.5
0.65
+0.2
−0.1
0.8
20.0min
4.1max
1.2
±0.2
3.0
–0.5
0.86
–
0.1
+
0.2
0.4
±0.1
a:
Part Number
b: Polarity
c: Lot No.
5.45
±0.1
1.5
3.35
±0.2
2.54
±0.5
q
w
e
2.54
±0.5
10.2
+0.3
a: Part Number
b: Lot No.
a: Part Number
b: Lot No.
1
2
3
• TO-263
1.20±0.20
(0.40)
9.90±0.20
4.50±0.20
1.30
+0.10
–0.05
• TO3P-5Pin
NPN
Gate burr
(Including pulling
out the burr)
PNP
Gate burr
(Including pulling
out the burr)
9.20±0.20
15.30±0.30
1.40±0.20
0.10±0.15
(0.75) 2.00±0.10
(Measured at the root)
(Measured at the root)
(Including the solder drip)
4.90±0.20
1.27±0.10
2.54±0.20
0.80±0.10
2.54±0.20
0.50
+0.10
–0.05
(Measured at the root)
(1)
(2) (3)
10.00±0.20
(Measured at the root)
(Measured at the root)
(Measured at the root)
(Including the solder drip)
2.54±0.30
2.40±0.20
(R0.30)
(Unit : mm)
Transistors
171
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