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SM564023011X6G8

Description
DRAM
Categorystorage    storage   
File Size235KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM564023011X6G8 Overview

DRAM

SM564023011X6G8 Parametric

Parameter NameAttribute value
MakerSMART Modular Technology Inc
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SMART
Features
®
SM5640230UUXUGU
March 31, 1997
Modular Technologies
16MByte (2M x 64) DRAM Module - 1Mx16 based
168-pin DIMM, Buffered
Part Numbers
SM56402300UXUGU
SM56402301UXUGU
SM56402308UXUGU
SM56402309UXUGU
Standard
:
JEDEC
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K/4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 1.010"(SOJ)/1.150”(TSOP)
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-1 (5.0V)/390052-4 (3.3V)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5640280UUXUGU
:
2Mx64,
2Mx8 based.
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
RAS0#
WE0#
OE0#
A0
CAS4#
CAS5#
CAS6#
CAS7#
RAS2#
WE2
OE2
B0
1Mx16
DRAM
1Mx16
DRAM
1Mx16
DRAM
1Mx16
DRAM
1Mx16
DRAM
RAS1#
DQ0~DQ15
1Mx16
DRAM
1Mx16
DRAM
1Mx16
DRAM
RAS3#
DQ16~DQ31
DQ32~DQ47
DQ48~DQ63
DQ0~DQ63
Notes : 1. A0~A11 are connected to all DRAMs through buffers
(A10 & A11 are NC for 1K refresh module).
2. All signals including PDs (with exception of RAS#, Data and IDs) are buffered.
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
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