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MRFG35005NT1

Description
S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
Categorysemiconductor    Discrete semiconductor   
File Size122KB,12 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet Parametric View All

MRFG35005NT1 Overview

S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

MRFG35005NT1 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage15 V
Processing package descriptionROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formNO LEAD
terminal coatingTIN
Terminal locationQUAD
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionSOURCE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Channel typeN-CHANNEL
field effect transistor technologyHIGH ELECTRON MOBILITY
operating modeDEPLETION
Transistor typeRF POWER
highest frequency bandS BAND
Freescale Semiconductor
Technical Data
Document Number: MRFG35005MT1
Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
4.5 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
N Suffix Indicates Lead - Free Terminations
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35005NT1
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
15
10.5
(2)
0.07
(2)
-5
30
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Symbol
R
θJC
Value
14.2
(2)
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35005NT1 MRFG35005MT1
1
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