NTF3055-160T3 datasheet, PDF - EEWORLD Datasheet

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NTF3055-160T3: DescriptionPower MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223; CategoryDiscrete semiconductor The transistor; File Size57KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTF3055-160T3 Overview

Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223

NTF3055-160T3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-261
package instruction	CASE 318E-04, 4 PIN
Contacts	4
Manufacturer packaging code	CASE 318E-04
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	65 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	2 A
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.3 W
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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NTF3055-160

Preferred Device

Power MOSFET

2.0 Amps, 60 Volts

N–Channel SOT–223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Applications

http://onsemi.com

•

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

2.0 AMPERES

60 VOLTS

RDS(on) = 160 mW

N–Channel

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

Gate–to–Source Voltage

– Continuous

– Non–repetitive (tp

≤

10 ms)

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 100°C

– Single Pulse (tp

≤

µs)

Total Power Dissipation @ TA = 25°C (Note 1.)

Total Power Dissipation @ TA = 25°C (Note 2.)

Derate above 25°C

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc,

IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)

Thermal Resistance

– Junction to Ambient (Note 1.)

– Junction to Ambient (Note 2.)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Symbol

VDSS

VDGR

VGS

Value

2.0

1.2

6.0

2.1

1.3

0.014

–55 to

175

Unit

Vdc

Vpk

Adc

Apk

W/°C

°C

5160

= Device Code

= Location Code

= Work Week

MARKING

DIAGRAM

IDM

SOT–223

CASE 318E

STYLE 3

5160

LWW

TJ, Tstg

EAS

PIN ASSIGNMENT

°C/W

θJA

72.3

114

260

°C

Drain

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu. Area 1.127 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in2).

Gate

Drain

Source

ORDERING INFORMATION

Device

NTF3055–160T1

NTF3055–160T3

NTF3055–160T3LF

Package

Shipping

SOT–223 1000 Tape & Reel

SOT–223 4000 Tape & Reel

Semiconductor Components Industries, LLC, 2001

July, 2001 – Rev. 0

Publication Order Number:

NTF3055–160/D

NTF3055-160T3 Related Products

	NTF3055-160T3	NTF3055-160	NTF3055-160T1	NTF3055-160T3LF
Description	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223	Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
Is it Rohs certified?	incompatible	-	incompatible	incompatible
Parts packaging code	TO-261	-	TO-261	TO-261
package instruction	CASE 318E-04, 4 PIN	-	CASE 318E-04, 4 PIN	CASE 318E-04, 4 PIN
Contacts	4	-	4	4
Manufacturer packaging code	CASE 318E-04	-	CASE 318E-04	CASE 318E-04
Reach Compliance Code	_compli	-	_compli	not_compliant
ECCN code	EAR99	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	65 mJ	-	65 mJ	65 mJ
Shell connection	DRAIN	-	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V	60 V
Maximum drain current (Abs) (ID)	2 A	-	2 A	2 A
Maximum drain current (ID)	2 A	-	2 A	2 A
Maximum drain-source on-resistance	0.16 Ω	-	0.16 Ω	0.16 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261	-	TO-261	TO-261
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	-	e0	e0
Humidity sensitivity level	1	-	1	1
Number of components	1	-	1	1
Number of terminals	4	-	4	4
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	-	175 °C	175 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.3 W	-	1.3 W	1.3 W
Maximum pulsed drain current (IDM)	6 A	-	6 A	6 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON
Base Number Matches	1	-	1	1

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