NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
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•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
2.0 AMPERES
60 VOLTS
RDS(on) = 160 mW
N–Channel
D
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp
≤
10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
Thermal Resistance
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
VDSS
VDGR
VGS
Value
60
60
±
20
±
30
2.0
1.2
6.0
2.1
1.3
0.014
–55 to
175
65
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
°C
mJ
5160
L
WW
= Device Code
= Location Code
= Work Week
1
4
G
S
MARKING
DIAGRAM
ID
ID
IDM
PD
2
3
SOT–223
CASE 318E
STYLE 3
5160
LWW
TJ, Tstg
EAS
PIN ASSIGNMENT
°C/W
R
θJA
R
θJA
TL
72.3
114
260
°C
4
Drain
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device
NTF3055–160T1
NTF3055–160T3
NTF3055–160T3LF
Package
Shipping
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
SOT–223 4000 Tape & Reel
©
Semiconductor Components Industries, LLC, 2001
1
July, 2001 – Rev. 0
Publication Order Number:
NTF3055–160/D
NTF3055–160
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3.)
(VGS = 0 Vdc, ID = 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0 Vdc)
V(BR)DSS
60
–
IDSS
–
–
IGSS
–
–
–
–
1.0
10
±
100
nAdc
72
72
–
–
Vdc
mV/°C
µAdc
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage (Note 3.)
(VDS = VGS, ID = 250
µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 1.0 Adc)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
VGS(th)
2.0
–
RDS(on)
–
VDS(on)
–
gfs
–
0.142
0.270
1.8
0.384
–
–
Mhos
142
160
Vdc
3.1
6.6
4.0
–
Vdc
mV/°C
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 V,
Vd
V
f = 1.0 MHz)
Ciss
Coss
Crss
–
–
–
200
68
26
280
100
40
pF
SWITCHING CHARACTERISTICS
(Note 4.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 2.0 Adc,
Vd
2 0 Ad
VGS = 10 Vdc) (Note 3.)
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1
Ω)
(Note 3.)
td(on)
tr
td(off)
tf
QT
Q1
Q2
–
–
–
–
–
–
–
9.2
9.2
16
9.2
6.9
1.4
3.0
20
20
40
20
14
–
–
nC
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3.)
VSD
–
–
trr
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3.)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
ta
tb
QRR
–
–
–
–
0.86
0.70
28.9
19.1
9.8
0.030
1.0
–
–
–
–
–
µC
ns
Vdc
Reverse Recovery Time
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NTF3055–160
3.6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
VGS = 4.5 V
VGS = 8 V
VGS = 5 V
VGS = 7 V
VGS = 6 V
VGS = 5.5 V
2.8
2.4
2
1.6
1.2
0.8
0.4
0
3
3.4
3.8
4.2
4.6
5
5.4
5.8
6.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 100°C
TJ = –55°C
TJ = 25°C
VDS
≥
10 V
Figure 1. On–Region Characteristics
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
Figure 2. Transfer Characteristics
0.28
VGS = 10 V
0.24
TJ = 100°C
0.2
0.16
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
TJ = 25°C
TJ = –55°C
0.28
VGS = 15 V
0.24
0.2
0.16
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
ID = 1 A
VGS = 10 V
IDSS, LEAKAGE (nA)
100
1000
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
VGS = 0 V
TJ = 150°C
TJ = 125°C
10
TJ = 100°C
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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NTF3055–160
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
560
VDS = 0 V
480
C, CAPACITANCE (pF)
400
320
240
160
80
0
10
Crss
Ciss
Coss
Crss
5 VGS 0 VDS 5
10
15
20
25
Ciss
VGS = 0 V
TJ = 25°C
12
QT
VGS
8
6
4
2
0
0
ID = 2 A
TJ = 25°C
1
2
3
4
5
6
7
8
Q1
Q2
10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
IS, SOURCE CURRENT (AMPS)
VDS = 30 V
ID = 2 A
VGS = 10 V
t, TIME (ns)
2
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
VGS = 0 V
TJ = 25°C
1.6
10
td(off)
td(on)
tr
tf
1.2
0.8
0.4
1
1
10
RG, GATE RESISTANCE (Ω)
100
0
0.6
0.64
0.68
0.72
0.76
0.8
0.84
0.88
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
ID, DRAIN CURRENT (AMPS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
70
Figure 10. Diode Forward Voltage versus Current
ID = 6 A
60
50
40
30
20
10
0
25
50
75
100
125
150
175
10
1
dc
0.1
10 ms
1 ms
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
100
µs
10
µs
10
100
0.001
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF3055–160
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
100
D = 0.5
10
0.2
0.1
0.05
1
MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
P(pk)
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
t2
DUTY CYCLE, D = t1/t2
100
1000
t1
Figure 13. Thermal Response
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