DUAL CHANNEL
ILD32
QUAD CHANNEL
PHOTODARLINGTON OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• Isolation Test Voltage, 5300 VAC
RMS
• High Isolation Resistance, 10
11
Ω
Typical
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
V
•
VDE 0884 Available with Option 1
D E
ILQ32
Dimensions in inches (mm)
Dual
Channel
.268 (6.81)
.255 (6.48)
4
3
2
1
Pin One I.D.
Anode
1
8 Emitter
7 Collector
6 Collector
5 Emitter
Cathode 2
Cathode 3
5
6
7
8
Anode 4
.390 (9.91)
.379 (9.63)
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°
C.........................100 mW
Derate Linearly from 25
°
C....................1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage .............30 V
Collector (Load) Current..............................125 mA
Power Dissipation at 25
°
C Ambient ...........150 mW
Derate Linearly from 25
°
C......................2.0 mW/
°
C
Package
Isolation Test Voltage (between emitter
and detector refer to standard climate
23
°
C/50%RH, DIN 50014)
t=1 sec........................................... 5300 VAC
RMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ........................
≥
175
Isolation Resistance
V
IO
=500V, T
A
=25
°
C ......................... R
IO
=10
12
Ω
V
IO
=500V, T
A
=100
°
C ....................... R
IO
=10
11
Ω
Total Dissipation at 25
°
C Ambient
ILD32 .....................................................400 mW
ILQ32 .....................................................500 mW
Derate Linearly from 25
°
C
ILD32 ...............................................5.33 mW/
°
C
ILQ32 ...............................................6.67 mW/
°
C
Storage Temperature ...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Lead Soldering Time at 260
°
C .................... 10 sec.
DESCRIPTION
The ILD32/ILQ32 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits. These optocou-
plers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
The ILD32 has two isolated channels in a DIP pack-
age, and the ILQ32 has four channels. These
devices can be used to replace 4N32s or 4N33s in
applications calling for several single channel opto-
couplers on a board.
Quad
Channel
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.305 typ.
(7.75) typ.
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
Pin One I.D.
Anode
.135 (3.43)
.115 (2.92)
.100 (2.54)
Typ.
1
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
.305 typ.
(7.75) typ.
Cathode 2
Cathode 3
.268 (6.81)
.255 (6.48)
Anode 4
Anode
5
Cathode 6
.790 (20.07)
.779 (19.77 )
Cathode 7
Anode 8
Emitter
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.135 (3.43)
.115 (2.92)
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.100 (2.54)
Typ.
Electrical Characteristics
(T
A
=25
°
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Collector-Emitter
Leakage Current
Package
Current Transfer Ratio
Collector Emitter
Saturation Voltage
Isolation Capacitance
Turn-On Time
Turn-Off Time
CTR
V
CEsat
C
ISOL
t
on
t
off
0.5
15
30
500
1.0
%
V
pF
µ
s
µ
s
V
CC
=10 V
I
F
=5 mA,
R
L
=100
Ω
I
F
=10 mA
I
C
=2 mA,
I
F
=8 mA
BV
CEO
BV
ECO
I
CEO
30
5
10
1.0
100
V
V
nA
I
C
=100
µ
A,
I
F
=0
I
E
=100
µ
A
V
CE
=10V,
I
F
=0
V
F
I
R
C
O
1.25
0.1
25
1.5
100
V
µ
A
pF
I
F
=10 mA
V
R
=3.0 V
V
R
=0 V
Min.
Typ.
Max.
Unit
Condition
5–1
Figure 1. Forward voltage versus forward current
1.4
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
1
10
IF - Forward Current - mA
100
Ta = 85°C
Ta = 25°C
Ta = -55°C
Figure 5. High to low propagation delay versus
collector load resistamce and LED current
tpHL - High/Low Propagation
delay -
µs
20
1KΩ
15
10
5
0
0
5
10
15
IF - LED Current - mA
20
100Ω
Ta = 25°C
Vcc = 10 V
Vth = 1.5 V
NCTRce - Normalized CTR
Figure 2. Normalized non-saturated and saturated
CTRce at TA=25
°
C versus LED current
1.2
Normalized to:
Vce = 10 V
1.0
IF = 10 mA
0.8
Ta = 25
°C
Vce = 10V
0.6
0.4
0.2
Vce =1V
0.0
.1
1
10
100
IF - LED Current - mA
1000
Figure 6. Switching timing
I
F
V
O
t
R
t
D
t
PLH
V
TH
=1.5 V
t
F
t
PHL
t
S
Figure 3. Normalized non-saturated and saturated
collector-emitter current versus LED current
10
N Ice - Normalized Ice
Figure 7. Switching schematic
V
CC
=10 V
F=10 KHz,
DF=50%
Normalized to:
Ta = 25°C
IF = 10 mA
1
Vce = 10 V
Vce = 10 V
R
L
V
O
Vce = 1V
.1
.01
.001
.1
IF=5 mA
1
10
IF - LED Current - mA
100
Figure 4. Low to high propagation delay versus
collector load resistance and LED current
tpLH - Low/High Propagation
Delay -
µ
s
80 Ta = 25°C, Vcc = 10 V
Vth = 1.5 V
60
220Ω
40
470Ω
20
100Ω
0
0
5
10
15
IF - LED Current - mA
20
ILD32/ILQ32
1KΩ
5–2