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BYM36EAMO

Description
2.9A, 1000V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size115KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYM36EAMO Overview

2.9A, 1000V, SILICON, RECTIFIER DIODE

BYM36EAMO Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current65 A
Number of components1
Phase1
Number of terminals2
Maximum output current2.9 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
1996 Sep 18
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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