IMBD4148
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
♦
Silicon Epitaxial Planar Diodes
Top View
.056 (1.43
)
.052 (1.33
)
♦
Fast switching diode in case
SOT-23, especially suited for
automatic insertion.
including: the DO-35 case with the type
designation 1N4148, the Mini-MELF case with
the type designation LL4148, and the SOD-123
case with the type designation 1N4148W
1
2
max. .004 (0.1)
♦
This diode is also available in other case styles
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
Marking
A2
3
Top View
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and
≥
f
≥
50 Hz
Surge Forward Current at t < 1 s and T
j
= 25 °C
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
75
100
150
1)
Unit
V
V
mA
V
R
V
RM
I
0
I
FSM
P
tot
T
j
T
S
500
350
1)
150
–65 to +150
mA
mW
°C
°C
Device on fiberglass substrate, see layout
4/98
IMBD4148
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 10 mA
Leakage Current
at V
R
= 70 V
at V
R
= 70 V, T
j
= 150 °C
at V
R
= 25 V, T
j
= 150 °C
Capacitance
at V
F
= V
R
= 0
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 10 mA
V
R
= 6 V, R
L
= 100
Ω
Thermal Resistance
Junction to Ambient Air
1)
Min.
–
Typ.
–
Max.
1
Unit
V
V
F
I
R
I
R
I
R
C
tot
t
rr
–
–
–
–
–
–
–
–
–
–
2.5
50
30
4
4
µA
µA
µA
pF
ns
R
thJA
–
–
450
1)
K/W
Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)