EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!
Features
1) Two DTC144Es chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMH2
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
All terminals have same dimensions
Abbreviated symbol : H2
1.3
0.65
0.7
0.8
1.1
0.9
0.2
(6)
1.25
The following characteristics apply to both DTr
1
and DTr
2
.
0.15
2.1
!
Equivalent circuit
EMH2 / UMH2N
(3) (2) (1)
R
1
R
2
DTr
1
DTr
2
R
2
R
1
(4) (5)
R
1
=47kΩ
R
2
=47kΩ
DTr
2
R
2
R
1
(3) (2)
R
1
=47kΩ
R
2
=47kΩ
0.1Min.
0to0.1
IMH2A
(4) (5) (6)
R
1
R
2
DTr
1
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : H2
IMH2A
0.95 0.95
1.9
2.9
(6)
0.3
(4)
1.6
2.8
0.15
!
Packaging specifications
Package
Code
Type
EMH2
UMH2N
IMH2A
−
−
−
Basic ordering
unit (pieces)
T2R
8000
Taping
TN
3000
−
T110
3000
−
−
0.3to0.6
0to0.1
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H2
(3)
(6)
(1)
(5)
(2)
(1)
(1)
All terminals have same dimensions
2.0
(5)
(2)
!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
ROHM : EMT6
(4)
0.65
UMH2N
(3)
0.5
0.5 0.5
1.0
1.6
EMH2 / UMH2N / IMH2A
Transistors
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C(Max.)
Power
dissipation
EMH2,UMH2N
IMH2A
Tj
Limits
50
40
−10
30
100
150 (TOTAL)
300 (TOTAL)
150
Unit
V
V
Output current
mA
Pd
mW
°C
°C
∗
1
∗
2
Junction temperature
Storage temperature
Tstg
−55~+150
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
!
Electrical characteristics
(Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
3
−
−
−
68
−
32.9
0.8
Typ.
−
−
0.1
−
−
−
250
47
1
Max.
0.5
−
0.3
0.18
0.5
−
−
61.1
1.2
Unit
V
V
mA
µA
−
MH
Z
kΩ
−
Conditions
V
CC
=5V, I
O
=100µA
V
O
=0.3V, I
O
=2mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=5mA
V
CE
=10mA, I
E
=−5mA, f=100MHz
−
−
∗
∗
Transition frequency of the device
!
Electrical characteristic curves
100
10m
V
O
=0.3V
50
5m
V
CC
=5V
1k
500
V
O
=5V
Ta=100°C
25°C
−40°C
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : Io
(A)
DC CURRENT GAIN : G
I
1.0
1.5
2.0
2.5
3.0
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m100m
Ta=−40°C
25°C
100°C
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
Ta=100°C
25°C
1m
−40°C
2m
200
100
50
20
10
5
2
0
0.5
1
100µ 200µ 500µ1m
2m
5m 10m 20m 50m100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
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