DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital
circuits.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
0.1
+0.1
–0.05
1.6 ± 0.1
0.8 ± 0.1
D
0 to 0.1
G
0.2
0.5
+0.1
–0
FEATURES
•
Can be driven by a 2.5 V power source.
•
Low gate cut-off voltage.
S
0.5
0.6
0.75 ± 0.05
1.0
1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
V
V
A
A
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
#
20
#
0.1
#
0.4
200
150
–55 to +150
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Gate Protect
Diode
Source
Internal Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2
2.
Mounted on ceramic substrate of 3.0cm
Remark
×
0.64 mm
Marking : C1
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13801EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1999
2SJ559
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
DS
= –30 V, V
GS
= 0 V
V
GS
=
#
20 V, V
DS
= 0 V
V
DS
= –3 V, I
D
= –10
µ
A
V
DS
= –3 V, I
D
= –10 mA
V
GS
= –2.5 V, I
D
= –1 mA
V
GS
= –4 V, I
D
= –10 mA
V
GS
= –10 V, I
D
= –10 mA
V
DS
= –3 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –3 V
I
D
= –10 mA
V
GS(on)
= –4 V
R
G
= 10
Ω,
R
L
= 300
Ω
–1.0
20
23
11
6
5
15
1.3
140
330
220
320
60
23
13
–1.4
MIN.
TYP.
MAX.
–1
UNIT
µ
A
µ
A
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
#
10
–1.7
TEST CIRCUIT SWITCHING TIME
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
D
Wave Form
V
GS
V
GS
Wave Form
0
10 %
V
GS(on)
90 %
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
2
Data Sheet D13801EJ1V0DS00
2SJ559
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
–100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT - Derating Factor - %
I
D
- Drain Current - mA
80
–80
V
GS
= –10 V
V
GS
= –6 V
V
GS
= –4 V
V
GS
= –3 V
60
–60
40
–40
20
–20
V
GS
= –2.5 V
0
0
30
60
90
120
T
A
- Ambient Temperature - C
150
0
0
–1
–2
–3
–4
V
DS
- Drain to Source Voltage - V
–5
TRANSFER CHARACTERISTICS
–100
Iy
fs
I - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
V
DS
= –3 V
V
DS
= –3 V
–10
I
D
- Drain Current - mA
T
A
= 125
˚C
–1
T
A
= 75
˚C
T
A
= 25
˚C
–0.1
T
A
= –25
˚C
100
T
A
= –25
˚C
T
A
= 25
˚C
10
T
A
= 75
˚C
T
A
= 125
˚C
1
–0.1
–0.01
–0.001
0
–0.8
–1.6
–2.4
–3.2
–4.0
–1
–10
–100
–1000
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= –2.5 V
50
40
30
20
T
A
= 25
˚C
10
0
–0.1
T
A
= –25
˚C
T
A
= 125
˚C
T
A
= 75
˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= –4 V
50
40
30
20
10
0
–0.1
T
A
= 25
˚C
T
A
= –25
˚C
–1
–10
–100
I
D
- Drain Current - mA
–1000
T
A
= 125
˚C
T
A
= 75
˚C
–1
–10
–100
I
D
- Drain Current - mA
–1000
Data Sheet D13801EJ1V0DS00
3
2SJ559
R
DS(on)
- Drain to Source On-Stage Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
50
40
30
20
10
0
–0.1
T
A
=
25
˚C
T
A
=
–25
˚C
T
A
=
75
˚C
T
A
=
125
˚C
V
GS
=
–10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
50
I
D
=
–1 mA
40
30
20
10
0
0
–2
–4
–6
–8
V
GS
- Gate to Source Voltage - V
–10
I
D
=
–10 mA
I
D
=
–100 mA
–1
–10
–100
I
D
- Drain Current - mA
–1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
C
iss
,C
oss
,C
rss
- Capacitance - pF
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
t
r
t
f
t
d(on)
100
t
d(off)
V
GS
= 0 V
f = 1 MHz
C
oss
10
C
iss
C
rss
1
–1
–10
V
DS
- Drain to Source Voltage - V
–100
10
–10
V
DD
= –3 V
V
GS(on)
= –
4 V
R
in
= 10
Ω
–100
I
D
- Drain Current - mA
–1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000
I
D
- Reverse Drain Current - mA
–100
–10
–1
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
V
SD
- Source to Drain Voltage - V
4
Data Sheet D13801EJ1V0DS00
2SJ559
[MEMO]
Data Sheet D13801EJ1V0DS00
5
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