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BA582E6433

Description
Mixer Diode, Very High Frequency, Silicon
CategoryDiscrete semiconductor    diode   
File Size39KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BA582E6433 Overview

Mixer Diode, Very High Frequency, Silicon

BA582E6433 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.4 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

BA582E6433 Related Products

BA582E6433 BA582E6327
Description Mixer Diode, Very High Frequency, Silicon Mixer Diode, Very High Frequency, Silicon
Maker SIEMENS SIEMENS
package instruction R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Maximum diode capacitance 1.4 pF 1.4 pF
Diode component materials SILICON SILICON
Diode type MIXER DIODE MIXER DIODE
frequency band VERY HIGH FREQUENCY VERY HIGH FREQUENCY
JESD-30 code R-PDSO-G2 R-PDSO-G2
Number of components 1 1
Number of terminals 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Base Number Matches 1 1
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