BA582E6327 datasheet, PDF - EEWORLD Datasheet

BA582E6327: DescriptionMixer Diode, Very High Frequency, Silicon; CategoryDiscrete semiconductor diode; File Size39KB，2 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BA582E6327 Overview

Mixer Diode, Very High Frequency, Silicon

	BA582E6327	BA582E6433
Description	Mixer Diode, Very High Frequency, Silicon	Mixer Diode, Very High Frequency, Silicon
Maker	SIEMENS	SIEMENS
package instruction	R-PDSO-G2	R-PDSO-G2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Maximum diode capacitance	1.4 pF	1.4 pF
Diode component materials	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE
frequency band	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY
JESD-30 code	R-PDSO-G2	R-PDSO-G2
Number of components	1	1
Number of terminals	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Base Number Matches	1	1

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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