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EDI88257LP85CI

Description
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Categorystorage    storage   
File Size285KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

EDI88257LP85CI Overview

Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88257LP85CI Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeDIP
package instruction0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.000185 A
Minimum standby current2 V
Maximum slew rate0.075 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
White Electronic Designs
256Kx8 Monolithic SRAM
FEATURES
256Kx8 CMOS Static
Random Access Memory
• Access Times of 70, 85, 100ns
• Data Retention Function (LP Versions)
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
JEDEC Approved Pinout
• 32 pin Ceramic DIP, 0.6 mils wide (Package 9)
Single +5V (±10%) Supply Operation
EDI88257C
The EDI88257C is a 2 Megabit 256Kx8 bit Monolithic
CMOS Static RAM.
The 32 pin DIP pinout adheres to the JEDEC standard for
the two megabit device, and is a pin replacement for the
256Kx8 module, EDI88257C. The device is upgradeable
to the 512Kx8 SRAM, the EDI88512C. Pin 1 becomes the
higher order address.
A Low Power version, EDI88257LP, offers a data retention
function for battery back-up opperation. Military product is
available compliant to Appendix A of MIL-PRF-38535.
FIGURE 1 – PIN CONFIGURATION
32 DIP
PIN DESCRIPTION
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
W#
A13
A8
A9
A11
G#
A10
E#
I/O7
I/O6
I/O5
I/O4
I/O3
A0-17
TOP VIEW
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0-17
W#
E#
G#
DQ0-7
V
CC
V
SS
NC
Address Inputs
Write Enable
Chip Enable
Output Enable
Data Inputs/Outputs
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
DQ0-7
W#
E#
G#
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 1999
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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