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IRFP460AS

Description
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
CategoryDiscrete semiconductor    The transistor   
File Size115KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFP460AS Overview

Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

IRFP460AS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionSMD-247, 3 PIN
Contacts3
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)960 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.27 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)280 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-94011A
SMPS MOSFET
Applications
l
SMPS, UPS, Welding and High Speed
V
DSS
Power Switching
500V
Benefits
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
Isolated Central Mounting Hole
l
Fast Switching
l
Ease of Paralleling
l
Simple Drive Requirements
l
Solder plated and leadformed for surface mounting
Description
Third Generation HEXFET
®
s from International Rectifier provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also provides
greater creepage distance between pins to meet the requirements of
most safety specifications.
This plated and leadformed version of the TO-247 package allows
the package to be surface mounted in an application.
IRFP460AS
HEXFET
®
Power MOSFET
Rds(on) max
0.27Ω
I
D
20A
SMD-247
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Mounting torqe, 6-32 or M3 screw
Maximum Reflow Temperature
Max.
20
13
80
280
2.2
± 30
3.8
-55 to + 150
10 lbf•in (1.1N•m)
230 (Time above 183 °C
should not exceed 100s)
Units
A
W
W/°C
V
V/ns
°C
°C
Typical SMPS Topologies:
l
Full Bridge
l
PFC Boost
www.irf.com
Notes

through
…
are on page 8
1
01/17/01
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