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IRFR13N20D

Description
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
CategoryDiscrete semiconductor    The transistor   
File Size683KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFR13N20D Overview

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

IRFR13N20D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.235 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
SMPS MOSFET
PD-95354A
IRFR13N20DPbF
IRFU13N20DPbF
•
Lead-Free
www.irf.com
1
1/17/05

IRFR13N20D Related Products

IRFR13N20D
Description Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Parts packaging code TO-252AA
package instruction SMALL OUTLINE, R-PSSO-G2
Contacts 3
Reach Compliance Code unknow
ECCN code EAR99
Other features AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 130 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V
Maximum drain current (Abs) (ID) 13 A
Maximum drain current (ID) 13 A
Maximum drain-source on-resistance 0.235 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA
JESD-30 code R-PSSO-G2
JESD-609 code e0
Humidity sensitivity level 1
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 110 W
Maximum pulsed drain current (IDM) 52 A
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
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