PD- 95073A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l
100% R
G
Tested
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
IRFR3711PbF
IRFU3711PbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
6.5mΩ
I
D
110A
D-Pak
IRFR3711
I-Pak
IRFU3711
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max
20
± 20
100
440
2.5
120
0.96
-55 to +150
Units
V
c
f
69
f
A
W
W/°C
°C
Maximum Power Dissipation
Maximum Power Dissipation
g
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-Case
h
Typ
Max
1.04
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
h
gh
–––
–––
–––
Notes
through
are on page 10
www.irf.com
1
1/7/05
IRFR/U3711PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min
20
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ
–––
0.022
5.2
6.7
–––
–––
–––
–––
–––
–––
Max Units
–––
–––
6.5
8.5
3.0
140
20
100
200
-200
nA
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
e
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
GSS
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
53
–––
–––
–––
–––
0.3
–––
–––
–––
–––
–––
–––
–––
Typ
–––
29
7.3
8.9
33
–––
12
220
17
12
2980
1770
280
Max Units
–––
44
–––
–––
–––
2.5
–––
–––
–––
–––
–––
–––
–––
pF
ns
Ω
V
DD
= 10V
I
D
= 30A
R
G
= 1.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
nC
S
I
D
= 15A
V
DS
= 10V
Conditions
V
DS
= 16V, I
D
= 30A
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 10V
e
e
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Min
–––
–––
–––
–––
–––
–––
–––
–––
Typ
–––
–––
Max
460
30
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Typ
–––
–––
0.88
0.82
50
61
48
65
Max Units
110
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/µs
f
A
Ã
440
1.3
–––
75
92
72
98
V
ns
nC
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
e
e
e
e
T
J
= 125°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/µs
2
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IRFR/U3711PbF
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
100
100
2.7V
2.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
10
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
T
J
= 150
°
C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 110A
I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
10
2.0
V DS = 25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3711PbF
100000
10
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
30A
V
DS
= 16V
V
DS
= 10V
8
C, Capacitance(pF)
10000
Ciss
Coss
1000
6
4
Crss
2
100
1
10
100
VDS , Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
ID, Drain-to-Source Current (A)
1000
10
100
100µsec
1msec
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
VDS , Drain-toSource Voltage (V)
100
10msec
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFR/U3711PbF
120
LIMITED BY PACKAGE
100
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
80
-
V
DD
V
GS
60
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
20
0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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