Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
500
500
1.5
1.2
3.0
±20
42
0.33
Refer to UIS Curve
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
∆B-
V
DSS
/∆T
J
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
Reference to 25
o
C, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 500V, V
GS
= 0V
V
DS
= 500V, V
GS
= 0V, T
J
= 125
o
C
MIN
500
-
TYP
-
0.61
MAX
-
-
UNITS
V
V/
o
C
Drain to Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
2
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
7
10
24
15
9
1.1
5
210
30
7
4
25
250
±100
7.000
-
-
-
-
-
12
1.4
7
-
-
-
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Forward Transconductance (Note 3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
GS
=
±20V
I
D
= 1.5A, V
GS
= 10V, (Figure 9)
V
DS
= 50V, I
DS
= 0.75A, (Figure 8)
V
DD
= 250V, I
D
≈
1.5A, R
GS
= 24Ω, R
L
= 167Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID
≈
1.5A, VDS = 0.8 x Rated BV
DSS
,
(Figure 12)
Gate Charge is Essentially Independent of
Operating Temperature
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz,
(Figure 10)
-
-
-
-
-
-
4-402
IRFR410, IRFU410
Electrical Specifications
PARAMETER
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
L
D
TEST CONDITIONS
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From Header
to Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
MIN
-
TYP
4.5
MAX
-
UNITS
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
3.0
110
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
D
MIN
-
-
TYP
-
-
MAX
1.5
3.0
UNITS
A
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
V
SD
t
rr
T
J
= 25
o
C, I
SD
= 1.5A, V
GS
= 0V, (Figure 11)
T
J
= 25
o
C, I
SD
= 1.5A, dI
SD
/dt = 100A/µs
-
130
-
-
2.0
520
V
ns
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 40µH, R
G
= 25Ω, peak I
AS
= 1.5A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
2.0
I
D
, DRAIN CURRENT (A)
0
50
100
150
1.5
0.8
0.6
0.4
0.2
0
1.0
0.5
0
25
50
T
C
, CASE TEMPERATURE (
o
C)
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
4-403
IRFR410, IRFU410
Typical Performance Curves
Unless Otherwise Specified
(Continued)
Z
θJC,
NORMALIZED TRANSIENT
1
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-1
10
-5
10
-4
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (s)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR D = t
1
/t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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