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IRFR9020

Description
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size237KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFR9020 Overview

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

IRFR9020 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)9.9 A
Maximum drain current (ID)9.9 A
Maximum drain-source on-resistance0.28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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IRFR9020 IRFR9022 IRFU9020 IRFU9022
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code compliant unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 50 V 50 V 50 V 50 V
Maximum drain current (Abs) (ID) 9.9 A 9 A 9.9 A 9 A
Maximum drain current (ID) 9.9 A 9 A 9.9 A 9 A
Maximum drain-source on-resistance 0.28 Ω 0.3 Ω 0.28 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA TO-251AA TO-251AA
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 2 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 42 W 42 W 42 W 42 W
Maximum pulsed drain current (IDM) 40 A 36 A 40 A 36 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
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